PHOTON-STIMULATED DESORPTION FROM CHEMICALLY TREATED SI SURFACES

Authors
OCHIAI I OGAWA T TAKAKUWA Y MOCHIJI K
Citation
I. Ochiai et al., PHOTON-STIMULATED DESORPTION FROM CHEMICALLY TREATED SI SURFACES, Surface science, 287, 1993, pp. 175-177
Citations number
7
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
287
Year of publication
1993
Part
A
Pages
175 - 177
Database
ISI
SICI code
0039-6028(1993)287:<175:PDFCTS>2.0.ZU;2-Z
Abstract
Experimental results are presented on the synchrotron-radiation-induce d desorption of oxygen ions from HF-treated Si surfaces measured with a quadrupole mass analyzer operated in the pulse-counting mode. The ef fect of atomic hydrogen exposure was studied. Desorption of H+, O+ and F+ ions was observed from HF-treated Si surfaces. The yield of O+ ion s was increased more than 30-fold by exposure to atomic hydrogen.