ELECTRICAL-IMPEDANCE SPECTROSCOPY OF SILICON SURFACE-STATES

Authors
VISCOR P VEDDE J
Citation
P. Viscor et J. Vedde, ELECTRICAL-IMPEDANCE SPECTROSCOPY OF SILICON SURFACE-STATES, Surface science, 287, 1993, pp. 510-513
Citations number
3
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
287
Year of publication
1993
Part
A
Pages
510 - 513
Database
ISI
SICI code
0039-6028(1993)287:<510:ESOSS>2.0.ZU;2-1
Abstract
Recently developed full, dynamical analysis of the electrical response in semiconductors and insulators at classical frequencies makes it po ssible to use electrical impedance spectroscopy also in the investigat ions of electron surface states. The results will be presented for sin gle crystal silicon with some experimental evidence that silicon surfa ce states form Anderson negative U centers.