D. Campi et al., MODELING OF NONLINEAR ABSORPTION AND REFRACTION IN QUANTUM-WELL STRUCTURES FOR ALL-OPTICAL SWITCHING, IEEE journal of quantum electronics, 29(4), 1993, pp. 1144-1157
We present a realistic model of the electromagnetic response in excite
d, type-I semiconductor quantum wells. A multisubband analysis of the
room temperature band edge spectra is introduced, in which the plasma
effects are determined through an iterative, numerical solution of a g
eneralized Bethe-Salpeter equation. Our method allows the treatment of
situations in which transitions higher than the first give sizeable c
ontributions to the nonlinear optical properties, as in coupled quantu
m wells or in the propagation of TM modes within waveguides based on q
uantum confined structures. Further, the method accounts for the effec
ts of finite quantum-well thickness and incorporates a phenomenologica
l description of the width of the resonance lines. The behavior is com
pared and contrasted to more idealized models introduced in earlier wo
rks, where single-subband, purely 2-D systems are treated. Computer ge
nerated spectra are compared with absorption spectra experimentally ob
tained in moderately strained InGaAs-InP QW's.