MODELING OF NONLINEAR ABSORPTION AND REFRACTION IN QUANTUM-WELL STRUCTURES FOR ALL-OPTICAL SWITCHING

Citation
D. Campi et al., MODELING OF NONLINEAR ABSORPTION AND REFRACTION IN QUANTUM-WELL STRUCTURES FOR ALL-OPTICAL SWITCHING, IEEE journal of quantum electronics, 29(4), 1993, pp. 1144-1157
Citations number
52
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
29
Issue
4
Year of publication
1993
Pages
1144 - 1157
Database
ISI
SICI code
0018-9197(1993)29:4<1144:MONAAR>2.0.ZU;2-2
Abstract
We present a realistic model of the electromagnetic response in excite d, type-I semiconductor quantum wells. A multisubband analysis of the room temperature band edge spectra is introduced, in which the plasma effects are determined through an iterative, numerical solution of a g eneralized Bethe-Salpeter equation. Our method allows the treatment of situations in which transitions higher than the first give sizeable c ontributions to the nonlinear optical properties, as in coupled quantu m wells or in the propagation of TM modes within waveguides based on q uantum confined structures. Further, the method accounts for the effec ts of finite quantum-well thickness and incorporates a phenomenologica l description of the width of the resonance lines. The behavior is com pared and contrasted to more idealized models introduced in earlier wo rks, where single-subband, purely 2-D systems are treated. Computer ge nerated spectra are compared with absorption spectra experimentally ob tained in moderately strained InGaAs-InP QW's.