CHARACTERIZATION OF ZIRCONIUM DIOXIDE FILM FORMED BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR DEPOSITION

Zirconium dioxide films were deposited on Si substrates by a plasma en hanced metal-organic chemical vapor deposition process involving the a pplication of vapor mixtures of Zr(tfacac)4 and oxygen. Rutherford bac kscattering spectroscopy (RBS) and Auger electron spectroscopy analyse s were performed to determine the chemical composition of ZrO2 films a nd the carbon contamination in ZrO2 films respectively. RBS analysis r evealed that stoichiometry was obtained in zirconia films deposited at 295-degrees-C. The film obtained at 265-degrees-C has an amorphous st ructure and above 265-degrees-C a monoclinic structure. The deposition rate of the ZrO2 films was strongly affected by competition with atom ic mobility and etching by the chemical complex of activated fluorine with increasing deposition temperatures.