THE STRUCTURE AND ELECTROMIGRATION BEHAVIOR OF ALUMINUM FILMS DEPOSITED BY THE PARTIALLY IONIZED BEAM TECHNIQUE

High purity aluminium films were deposited by the partially ionized be am technique. The structure of the films was investigated by transmiss ion electron microscopy. The influences of the accelerating voltage an d subsequent annealing on the average grain size, grain size distribut ion, texture and grain boundary morphology were studied. It was observ ed that the appearance of a large number of special grain boundaries i n the annealed films deposited with an accelerating voltage increased the electromigration interruption lifetimes of the films.