MoS2 ''spread'' films are prepared by exfoliating MoS2 powder to singl
e layers in suspension, then restacking t se single layers as an orien
ted film. The anisotropy of spread MoS2 films has been optimized by pr
eparing a composite with metal ions added to the edge sites and/or ins
ulating polymer inserted between the planes of the MoS2 single layers
which comprise the films. The ratio between the resistivities perpendi
cular (rho(perpendicular-to)) and parallel (rho(parallel-to)) to the l
ayer basal planes has been increased to at least 10(6) from a factor o
f 10(2) for pure MoS2 spread films by varying these additives. A model
for the conduction mechanism in such films is proposed.