XPS AND SIMS SNMS MEASUREMENTS ON THIN METAL-OXIDE LAYERS/

Authors
ALBERS T NEUMANN M LIPINSKY D BENNINGHOVEN A
Citation
T. Albers et al., XPS AND SIMS SNMS MEASUREMENTS ON THIN METAL-OXIDE LAYERS/, Applied surface science, 70-1, 1993, pp. 49-52
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
70-1
Year of publication
1993
Part
A
Pages
49 - 52
Database
ISI
SICI code
0169-4332(1993)70-1:<49:XASSMO>2.0.ZU;2-G
Abstract
Binary multilayers of TiO2/SiO2 and Si02/ZrO2 typically used as optica l filters have been investigated by XPS, SIMS and SNMS. Depending on t he composition of the layers, various SIMS signals are enhanced in the interface region of the depth profiles. Charging effects at the inter faces can be ruled out as an explanation for this behaviour by compari ng SIMS with SNMS and XPS data. However, the chemical state of the ele ments, which was monitored by XPS as a function of depth, plays the ke y role in the observed variations.