SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS

Authors
DALE RS RASTOMJEE CS POTTER FH EGDELL RG TATE TJ
Citation
Rs. Dale et al., SB AND BI IMPLANTED SNO2 THIN-FILMS - PHOTOEMISSION-STUDIES AND APPLICATION AS GAS SENSORS, Applied surface science, 70-1, 1993, pp. 359-362
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
70-1
Year of publication
1993
Part
A
Pages
359 - 362
Database
ISI
SICI code
0169-4332(1993)70-1:<359:SABIST>2.0.ZU;2-W
Abstract
Thin films of SnO2 have been implanted with 90 keV Sb-121 and Bi-209 u p to a dose of 3 x 10(16) ions/cm2. Sb causes a four orders of magnitu de reduction in sheet resistance and introduces electrons into the Sn 5s conduction band: these electrons can be seen directly in UV photoem ission spectra. Bi is a less effective dopant but improves the selecti vity of the films toward CO relative to CH4 in gas-sensor applications .