A VERSATILE 2-DIMENSIONAL MODEL FOR INGAASP QUANTUM-WELL SEMICONDUCTOR-LASERS

We develop a two-dimensional semiconductor laser model suitable for th e simulation of strained or lattice-matched InGaAsP lasers. An anisotr opic effective mass model is introduced to compute the gain and sponta neous emission spectra of the strained layers. We demonstrate that a s implified band structure model can be used to predict such phenomenon as gain switching in materials under tensile strain. Application examp les are given for the design of strained and lattice-matched lasers us ing the InGaAsP material system.