ON TRANSCONDUCTANCE IN THE P-CHANNEL SI SIGE HETEROJUNCTION FIELD-EFFECT TRANSISTOR/

Three factors affecting the transconductance characteristics of invers ion-channel heterojunction field effect transistors are discussed. In each case, the effect on the hole population in the channel and, there by, on the transconductance of the device is hypothesized. Experimenta l evidence which corroborates the effect of the various phenomena is a lso presented. These factors are (i) saturation of the hole population in the channel arising from dopant de-ionization in the charge sheet, (ii) parallel gate to source and drain current conduction arising fro m the physical structure of the device, and (iii) the effect of gate l eakage on the non-equilibrium surface potential of the n-n heterojunct ion.