QUANTUM INTERFERENCE EFFECTS AS A TOOL TO PROBE THE SIDEWALLS OF SUB-MICROMETER-SIZE N(+)GAAS CHANNELS

In narrow channels the properties of the sidewalls can have a crucial effect on both the physics and any device functionality of the electro nic transport through these structures. We assess the use of electron beam and ''dry etching'' fabrication techniques to define sidewalls by studying the influence of the sidewalls on the quantum transmission t hrough the channels and, in particular, show the sidewall scattering t o be inelastic in nature and to have implications ranging from electro n heating to electron coherence effects.