Gf. Mackay et al., RAPID THERMAL ANNEALING OF INSITU PHOSPHORUS-DOPED POLYSILICON EMITTERS, Canadian journal of physics, 70(10-11), 1992, pp. 1109-1111
Rapid thermal annealing of in situ phosphorus-doped polysilicon emitte
r transistors in the temperature range 850-1000-degrees-C greatly redu
ces the emitter resistance R(E) al the cost of a slight increase in ho
le back injection, seen as a decrease in emitter Gummel number G(E). A
nnealing at 1000-degrees-C for 5 s gives low emitter resistance (R(E)
almost-equal-to 100 OMEGA mum2) while maintaining good suppression of
back injection (G(E) greater-than-or-similar-to 10(14) scm-4). Anneali
ng at temperatures below 1000-degrees-C fails to reduce R(E) sufficien
tly for use in high-speed devices.