FERROELECTRICS FOR SEMICONDUCTOR-DEVICES

The integration of thin film ferroelectrics with silicon processing is being implemented for various types of devices. The technology is bas ed on the sputtering or chemical deposition of lead-based perovskites such as lead zirconate titanate. Factors concerned with the integratio n of ferroelectric films with semiconductor processing are described. Major interests in Canada include nonvolatile ferroelectric random acc ess memories for high-speed digital or long-term analog memory applica tions, high-density capacitors, electro-optic switches, and a wide ran ge of sensors and actuators integrated into silicon.