PREPARATION OF BATIO3 FILMS BY ICP FLASH EVAPORATION

ICP (inductively coupled plasma) flash evaporation, which was a recent ly developed process for film growth, was applied to the preparation o f BaTiO3 films. Powders of BaTiO3 (ave. dia. approximately 0.1 mum) we re evaporated in thermal Ar+O2 plasma and deposited onto substrates un der 20-60 kPa. Uniform and translucent films could be obtained on poli shed fused silica plates. They were consisted of cubic BaTiO3 and the lattice parameter ranged between 0.400 and 0.401 nm. The compositions of the films shown by Ba/Ti atomic ratio were 0.98-1.02. The effect of deposition conditions on the deposition manner were investigated. The results suggested that the mechanism of film growth in ICP flash evap oration was characterized by a mass-transport limited process under ve ry high supersaturation. Epitaxial growth was also observed for the fi lms deposited on (100) MgO single crystals.