Ml. Dreyer et al., AN ELECTROMIGRATION MODEL THAT INCLUDES THE EFFECTS OF MICROSTRUCTUREAND TEMPERATURE ON MASS-TRANSPORT, Journal of applied physics, 73(10), 1993, pp. 4894-4902
A model for electromigration in thin metal film interconnects is prese
nted that includes two components of diffusion. The grain-boundary and
lattice components of mass transport are considered in terms of their
temperature dependence and the metallurgical ''structure'' of pattern
ed planar interconnects. Interconnect structure is defined in terms of
single- and polycrystalline line segments, which result from the loca
l grain microstructure for a patterned interconnect line. The dependen
ce of the diffusional flux on the length and type of line segment is i
ncluded in the model. The results indicate that the grain structure of
the film plays an important role in determining the relative contribu
tion of the diffusion components to mass transport. The model assumes
that the length and type of interconnect line segment determines the r
elative contribution of grain boundary and lattice diffusion component
s, and provides a means for extrapolating accelerated test results for
planar interconnects by taking into consideration the temperature dep
endence of the diffusion mechanisms, and the effect of the local micro
structure on diffusion. The model also indicates that extrapolations m
ade using Black's equation may result in an overestimate of safe opera
ting conditions. Calculations show that the effective activation energ
y depends on the median grain size and its distribution parameter, D50
and sigma, respectively, and the interconnect linewidth W. Model calc
ulations of electromigration lifetime t50 were compared to experimenta
l results obtained on patterned interconnects using sputter-deposited
Al-1.5% Cu alloy films. The experimental data support a linewidth-depe
ndent electromigration activation energy and show that the dependence
of t50 on linewidth for W less-than-or-equal-to 3 D50 results from a c
hange in the dominant diffusion mechanism with temperature, linewidth,
and local interconnect ''structure.''