STRUCTURAL-PROPERTIES OF SILICON EPITAXY GROWN AT 200-600-DEGREES-C BY ELECTRON-BEAM EVAPORATION IN AN ULTRAHIGH-VACUUM SYSTEM

This article presents the structural properties of silicon epitaxy gro wn at 200-600-degrees-C by electron-beam evaporation in an ultrahigh v acuum system. Reflection high-energy electron diffraction was used to inspect wafer surface. Cross-sectional transmission electron microscop y was used to observe the epitaxial microstructure. The impurity profi les of epitaxial layers and epitaxy/substrate interface were measured by secondary ion mass spectroscopy. Furthermore, structural characteri stics of the epitaxial films grown at different process conditions wer e summarized to explore the key parameters that control the epitaxial quality. In addition to ex situ cleaning prior to loading, the wafer w as in situ cleaned by thermal desorption in the growth chamber at 840- degrees-C. The thickness of the silicon epitaxial layer is about 0.1 m um, which was grown at a rate of 0.020 nm/s or higher.