PHOTOQUENCHING AND THERMAL RECOVERY OF A THERMALLY STIMULATED CURRENTPEAK IN SEMIINSULATING GAAS

Authors
FANG ZQ LOOK DC
Citation
Zq. Fang et Dc. Look, PHOTOQUENCHING AND THERMAL RECOVERY OF A THERMALLY STIMULATED CURRENTPEAK IN SEMIINSULATING GAAS, Journal of applied physics, 73(10), 1993, pp. 4971-4974
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
10
Year of publication
1993
Part
1
Pages
4971 - 4974
Database
ISI
SICI code
0021-8979(1993)73:10<4971:PATROA>2.0.ZU;2-W
Abstract
A prominent thermally stimulated current peak T5 appearing in semi-ins ulating GaAs is shown to photoquench under infrared illumination, and then thermally recover at a rate r=2.0 x 10(8) exp(-0.26 eV/kT) s-1, e xactly the same as that observed for EL2, within experimental error. T wo possible explanations exist: (1) T5 and EL2 are microscopically ver y similar, probably each with an As(Ga) core; or (2) T5 is an electron trap that only appears to quench and recover with EL2 because EL2 con trols the electron lifetime. Several other traps show similar quenchin g and recovery behavior.