IMPACT IONIZATION COEFFICIENTS IN STRAINED INGAAS INALAS MULTIQUANTUMWELLS/

Authors
GUTIERREZAITKEN AL BHATTACHARYA PK
Citation
Al. Gutierrezaitken et Pk. Bhattacharya, IMPACT IONIZATION COEFFICIENTS IN STRAINED INGAAS INALAS MULTIQUANTUMWELLS/, Journal of applied physics, 73(10), 1993, pp. 5014-5016
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
10
Year of publication
1993
Part
1
Pages
5014 - 5016
Database
ISI
SICI code
0021-8979(1993)73:10<5014:IICISI>2.0.ZU;2-F
Abstract
We have measured electron and hole impact ionization coefficients in b iaxially strained InxGa1-xAs/InyAl1-yAs (0.44 < x < 0.62, 0.44 < y < 0 .62) multiquantum wells for the first time. It is seen that beta/alpha is enhanced due to strain-induced changes in band gap, band offsets, and bandstructure for tensile strain in the well and compressive strai n in the barrier. The results have been interpreted by considering ban d-to-band impact ionization and band-edge discontinuity impact ionizat ion processes.