CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/
Js. Rimmer et al., CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/, Journal of applied physics, 73(10), 1993, pp. 5032-5037
We have determined the interface state density at each interface in a
series of GaAs/AlGaAs multilayer heterostructures using capacitance-vo
ltage profile simulation. We find that the values obtained correlate t
o the interface recombination velocities determined by time resolved p
hotoluminescence and also to the strength of excitonic transitions obs
erved in steady-state photoluminescence. The optical data therefore su
pport the validity of our results. The results show that the interface
state density follows a trend that decreases with the growth of each
successive interface thereby supporting the view that the interfaces a
ct as gettering planes for impurities during growth. In addition, the
parallel application of electrical and optical techniques has allowed
us to estimate the activation energy and minority carrier capture cros
s section of the dominant recombination centers.