CORRELATION BETWEEN OPTICAL SPECTROSCOPY AND CAPACITANCE-VOLTAGE PROFILE SIMULATION APPLIED TO INTERFACE STATES IN MULTILAYER GAAS ALGAAS HETEROSTRUCTURES/

We have determined the interface state density at each interface in a series of GaAs/AlGaAs multilayer heterostructures using capacitance-vo ltage profile simulation. We find that the values obtained correlate t o the interface recombination velocities determined by time resolved p hotoluminescence and also to the strength of excitonic transitions obs erved in steady-state photoluminescence. The optical data therefore su pport the validity of our results. The results show that the interface state density follows a trend that decreases with the growth of each successive interface thereby supporting the view that the interfaces a ct as gettering planes for impurities during growth. In addition, the parallel application of electrical and optical techniques has allowed us to estimate the activation energy and minority carrier capture cros s section of the dominant recombination centers.