LIGHT-EMITTING-DIODES FROM PARTIALLY CONJUGATED POLY(P-PHENYLENE VINYLENE)

Citation
C. Zhang et al., LIGHT-EMITTING-DIODES FROM PARTIALLY CONJUGATED POLY(P-PHENYLENE VINYLENE), Journal of applied physics, 73(10), 1993, pp. 5177-5180
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
73
Issue
10
Year of publication
1993
Part
1
Pages
5177 - 5180
Database
ISI
SICI code
0021-8979(1993)73:10<5177:LFPCPV>2.0.ZU;2-5
Abstract
We report the effect of conversion conditions on the device characteri stics of poly(p-phenylene vinylene) (PPV) light-emitting diodes. Both electroluminescence and photoluminescence intensities decrease with in creasing degree of conversion. Partial conjugation enhances the electr oluminescence intensity and gives an efficiency (with Ca as electron-i njecting contact) as high as 0.75% photons per electron, about two ord ers of magnitude more efficient than from similar devices prepared fro m fully converted PPV. The results of constant current stress measurem ents suggest that the partially conjugated PPV diode is relatively sta ble at room temperature.