LUMINESCENCE OF NANOMETER-SIZED AMORPHOUS-SILICON NITRIDE SOLIDS

The energy levels of defect states in nanometer-sized amorphous silico n nitride solids were systematically studied in terms of ultraviolet e mission spectra. Six emission bands were observed, corresponding to 3. 2, 2.8, 2.7, 2.4, 2.3, and 2.0 eV, respectively. With increasing the h eat-treated temperature from room temperature to 1000-degrees-C in low vacuum, these emission bands became high. For the specimen heated at 1000-degrees-C, a new emission band of 3.0 eV appeared. The appearance of these emission bands is closely related to the formation of the en ergy levels of the defect states in the energy gap. The origin of thes e emission bands are discussed in detail.