CHEMICAL-VAPOR DEPOSITION OF METALLIC COPPER FILM IN THE PRESENCE OF OXYGEN

Authors
HAMMADI Z LECOHIER B DALLAPORTA H
Citation
Z. Hammadi et al., CHEMICAL-VAPOR DEPOSITION OF METALLIC COPPER FILM IN THE PRESENCE OF OXYGEN, Journal of applied physics, 73(10), 1993, pp. 5213-5215
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
73
Issue
10
Year of publication
1993
Part
1
Pages
5213 - 5215
Database
ISI
SICI code
0021-8979(1993)73:10<5213:CDOMCF>2.0.ZU;2-#
Abstract
Chemical-vapor deposition of copper using copper (II) bis(acetylaceton ate) is reported. It is shown that at 0.1 Torr and temperatures in the range of 250-350-degrees-C, the deposition occurs only if oxygen is a dded in the reactor. Auger spectroscopy, x-ray-diffraction, and resist ance measurements as a function of temperature lead to the conclusion that metallic copper is deposited.