AN EMITTER SWITCHED THYRISTOR WITH BASE RESISTANCE CONTROL

A new MOS-gated emitter switched thyristor structure with base resista nce control, which combines the best features of both the emitter swit ched thyristor (EST) and the base resistance controlled thyristor (BRT ), is reported for the first time. With this structure, it is possible to obtain turn-off (dynamic) current densities above the static latch -up current density of the parasitic thyristor in the EST, while prese rving its unique current saturation capability. It has been experiment ally demonstrated from 600-V forward blocking devices that the maximum controllable current density under dynamic conditions is a function o f both the gate bias and the dimensions of the N+ floating emitter. Tu rn-off measurements have demonstrated that the new EST structure has a maximum controllable current density of over 2.5 times that for the E ST structure without base resistance control.