DYNAMIC EARLY EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
GRINBERG AA LURYI S
Citation
Aa. Grinberg et S. Luryi, DYNAMIC EARLY EFFECT IN HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 14(6), 1993, pp. 292-294
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
6
Year of publication
1993
Pages
292 - 294
Database
ISI
SICI code
0741-3106(1993)14:6<292:DEEIHB>2.0.ZU;2-H
Abstract
A theory of the base transport in an abrupt-junction heterostructure b ipolar transistor (HBT) is developed in the diffusion limit. The theor y is valid for a continuous range of emitter injection energies DELTA and accounts for the Early effect (EE) both in the static and the high -frequency limits. Small-signal network parameters strongly depend on DELTA and differ from those in a graded emitter-base junction HBT.