EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE()

Authors
TAUR Y COHEN S WIND S LII T HSU C QUINLAN D CHANG CA BUCHANAN D AGNELLO P MII YJ REEVES C ACOVIC A KESAN V
Citation
Y. Taur et al., EXPERIMENTAL 0.1-MU-M P-CHANNEL MOSFET WITH P-POLYSILICON GATE ON 35-ANGSTROM GATE OXIDE(), IEEE electron device letters, 14(6), 1993, pp. 304-306
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
14
Issue
6
Year of publication
1993
Pages
304 - 306
Database
ISI
SICI code
0741-3106(1993)14:6<304:E0PMWP>2.0.ZU;2-2
Abstract
Very high-transconductance 0.1-mum surface-channel pMOSFET devices are fabricated with p+-poly gate on 35-angstrom-thick gate oxide. A 600-a ngstrom-deep p+ source-drain extension is used with self-aligned TiSi2 to achieve low series resistance. The saturation transconductances, 4 00 mS/mm at 300 K and 500 mS/mm at 77 K, are the highest reported to d ate for pMOSFET devices.