STARK-LEVEL ONE-PHONON DEPHASING PROCESS OF ND3-DOPED SILICATE GLASS-FIBER STUDIED WITH ACCUMULATED PHOTON-ECHOES()

Measurements of the homogeneous width of the (4)G(5/2), (2)G(7/2)-I-4( 9/2) transition of Nd3+ in a silicate glass fiber at low temperatures by the technique of accumulated photon echoes show that the dephasing processes are one-phonon processes between the Stark levels of Nd3+. T hese dephasing processes differ from the commonly observed processes o f rare-earth ion-doped glasses: the local-configurational-change-induc ed dephasing process and the Raman process with low-frequency modes. T he densely distributed Stark levels of the (4)G(5/2) and (2)G(7/2) sta tes are responsible for one-phonon processes. The transition-wavelengt h dependences of the homogeneous widths Gamma(h)(4.2 K) and Gamma(h)(T --> 0) ale explained by using the one-phonon process model.