POLARIZATION DEPENDENCE OF 2-PHOTON ABSORPTION AND ELECTRONIC RAMAN-SCATTERING INTENSITIES IN CRYSTALS

A formalism using the properties of the irreducible representation of the scattering tensors has been developed to predict up to the third o rder the polarization-dependent behavior of the electronic Raman-scatt ering intensities and the two-photon absorption intensities of transit ions between Stark levels. The polarization behavior of ions in crysta ls are tabulated for the 32 crystallographic point groups. The theory provides a stringent test for the Judd-Ofelt-Axe theory for two-photon intensities between Stark levels.