HIGH-TEMPERATURE OPERATION OF INGAASP INP HETEROSTRUCTURE LASERS AND INTEGRATED BACK FACET MONITORS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING

Authors
DZIOBA S JATAR S HERAK TV COOK JPD MARKS J JONES T SHEPHERD FR
Citation
S. Dzioba et al., HIGH-TEMPERATURE OPERATION OF INGAASP INP HETEROSTRUCTURE LASERS AND INTEGRATED BACK FACET MONITORS FABRICATED BY CHEMICALLY ASSISTED ION-BEAM ETCHING, Applied physics letters, 62(20), 1993, pp. 2486-2488
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
20
Year of publication
1993
Pages
2486 - 2488
Database
ISI
SICI code
0003-6951(1993)62:20<2486:HOOIIH>2.0.ZU;2-0
Abstract
Chemically assisted ion beam etching (CAIBE) has been used to etch InG aAsP/InP ridge laser facets. Smooth, vertical facets 4 mum deep have b een etched using Ar/Cl2 CAIBE with a beam voltage of 440 V and a beam current density of 0.08 mA/cm2. Room temperature and high temperature (85-degrees-C) L-I characteristics and device performance have been ev aluated, as well as the performance of integrated back facet monitors. Output powers of 9.5 mW from the laser and a monitor current of 3.75 mA have been obtained.