SILICON INTERSTITIAL ABSORPTION DURING THERMAL-OXIDATION AT 900 DEGREES-C BY EXTENDED DEFECTS FORMED VIA SILICON IMPLANTATION

Extended defect damage created by high-dose silicon implants is used t o study the interaction between extended defects and silicon interstit ials introduced via thermal oxidation. A buried epitaxial layer of bor on was used as an interstitial monitor, and a layer of extended defect s was formed between the surface and the buried layer via silicon impl ants. Samples were oxidized at 900-degrees-C in wet O2, and the amount of oxidation-enhanced diffusion was measured. For a silicon implant o f 1 X 10(13) cm-2, the enhancement was very similar in regions that ha d and had not been implanted. For an implant of 1 x 10(15) cm-2, the e nhancement was reduced in regions that had been implanted. The differe nce is explained by the absorption of the injected interstitials by a layer of extended defects.