THERMAL IMAGING USING THE ATOMIC FORCE MICROSCOPE

We have developed a new and simple technique for thermal imaging with submicrometer spatial resolution using the atomic force microscope. Th e method is particularly unique for simultaneously obtaining thermal a nd topographical images of biased electronic devices and interconnects where there could be different materials and potential variations on a scan surface. Application to a biased metal-semiconductor field-effe ct transistor showed the heating under the gate and a hot spot between the gate and drain where the electric field is known to be the highes t. Thermal images of a biased polycrystalline Al-Cu via structure show ed the grain boundaries to be hotter than within the grain. With the d evelopment of electronic devices and structures in the submicrometer r ange, this technique can become very useful as a tool for thermal char acterization and property measurement.