2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON

The recombination activity of well-defined NiSi2 precipitates and of m isfit dislocations in Ni contaminated Si samples has been investigated using the technique of the electron-beam-induced current in dependenc e on sample temperature and beam current. Individual NiSi2 precipitate s are found to show a high recombination activity, increasing slightly with temperature and decreasing with increasing beam current. On the other hand, misfit dislocations are nearly inactive at room temperatur e and increase their activity upon cooling the sample. The experimenta l findings are discussed in terms of recombination activity controlled by either defect charging or shallow centers.