2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON
M. Kittler et al., 2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON, Applied physics letters, 62(20), 1993, pp. 2513-2515
The recombination activity of well-defined NiSi2 precipitates and of m
isfit dislocations in Ni contaminated Si samples has been investigated
using the technique of the electron-beam-induced current in dependenc
e on sample temperature and beam current. Individual NiSi2 precipitate
s are found to show a high recombination activity, increasing slightly
with temperature and decreasing with increasing beam current. On the
other hand, misfit dislocations are nearly inactive at room temperatur
e and increase their activity upon cooling the sample. The experimenta
l findings are discussed in terms of recombination activity controlled
by either defect charging or shallow centers.