WAVE-FUNCTION DEFORMATION AND MOBILITY OF A 2-DIMENSIONAL ELECTRON-GAS IN A BACKGATED GAAS-ALGAAS HETEROSTRUCTURE

Authors
KUROBE A FROST JEF GRIMSHAW MP RITCHIE DA JONES GAC PEPPER M
Citation
A. Kurobe et al., WAVE-FUNCTION DEFORMATION AND MOBILITY OF A 2-DIMENSIONAL ELECTRON-GAS IN A BACKGATED GAAS-ALGAAS HETEROSTRUCTURE, Applied physics letters, 62(20), 1993, pp. 2522-2524
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
62
Issue
20
Year of publication
1993
Pages
2522 - 2524
Database
ISI
SICI code
0003-6951(1993)62:20<2522:WDAMOA>2.0.ZU;2-J
Abstract
The transport properties of a two-dimensional electron gas in a GaAs-A lGaAs heterostructure were studied at low temperatures as a function o f both back- and frontgate voltages. The mobility increased by a ratio as high as 5 as the backgate voltage was changed from 0 to + 1.4 V, a nd also showed a carrier density dependence steeper than that expected from remote ionized impurity scattering when the carrier density was lower than 2 X 10(11) CM-2 . The experimental results were compared to theoretical calculations based on the shape of the wave function.