MONOLITHIC INTEGRATION OF INGAASP INP LASERS AND HETEROSTRUCTURE BIPOLAR-TRANSISTORS BY SELECTIVE AREA EPITAXY/

The Letter describes the use of selective area epitaxy to prepare mono lithically integrated lasers and heterostructure bipolar transistors b ased on InGaAsP/InP. Selective growth offers a versatile method of lat eral integration of structurally dissimilar devices with the different device structures grown side by side in different growth cycles. Indi vidual devices can be optimised separately without any performance com promise. Bipolar transistors grown on the semi-insulating current bloc king layers of the buried heterostructure lasers show high gain, high breakdown voltage and excellent high current stability. Laser threshol d is reached at a base current as low as 160 muA and the light output is linear with current to 10 mW.