HIGH-PERFORMANCE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY/

Authors
SONG JI PALMSTROM CJ VANDERGAAG BP HONG WP HAYES JR CHOUGH KB
Citation
Ji. Song et al., HIGH-PERFORMANCE INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGHLY CARBON-DOPED BASE GROWN BY CHEMICAL BEAM EPITAXY/, Electronics Letters, 29(8), 1993, pp. 666-667
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
8
Year of publication
1993
Pages
666 - 667
Database
ISI
SICI code
0013-5194(1993)29:8<666:HIIHBW>2.0.ZU;2-W
Abstract
InP/In0.53Ga0.4As heterojunction bipolar transistors (HBTs) using a hi ghly carbon-doped base are reported. High carbon doping has been achie ved by chemical beam epitaxy (CBE). The resulting hole concentration i n the carbon-doped base is as high as 7 x 10(19)/cm3. To our knowledge , this is the highest doping level reported using carbon. HBTs with a 20 angstrom spacer layer exhibited nearly ideal I-V characteristics wi th collector and base current ideality factor of 1.018 and 1.037, resp ectively. Current gain and breakdown voltage BV(CEO) were 7 and 6 V, r espectively.