LONG-WAVELENGTH QUANTUM-WELL LASERS WITH INGAAS INP SUPERLATTICE OPTICAL CONFINEMENT AND BARRIER LAYERS/

Authors
GINTY A LAMBKIN JD CONSIDINE L KELLY WM
Citation
A. Ginty et al., LONG-WAVELENGTH QUANTUM-WELL LASERS WITH INGAAS INP SUPERLATTICE OPTICAL CONFINEMENT AND BARRIER LAYERS/, Electronics Letters, 29(8), 1993, pp. 684-685
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
8
Year of publication
1993
Pages
684 - 685
Database
ISI
SICI code
0013-5194(1993)29:8<684:LQLWII>2.0.ZU;2-O
Abstract
Long wavelength, separate confinement heterostructure, ridge waveguide laser diodes using InGaAs/InP short period superlattices and InGaAs q uantum wells have been demonstrated. The short period superlattices re place the more conventional quaternary alloys. These lasers have thres hold current densities of 1.9 kA/cm2, device efficiencies of 0.16 mW/m A and a characteristic temperature T0 of 56 K.