DIRECT COMPARISON OF INGAAS INGAALAS AND INGAAS/INGAASP QUANTUM-WELL MODULATORS/

Authors
HAWDON BJ TUTKEN T HANGLEITER A GLEW RW WHITEAWAY JEA
Citation
Bj. Hawdon et al., DIRECT COMPARISON OF INGAAS INGAALAS AND INGAAS/INGAASP QUANTUM-WELL MODULATORS/, Electronics Letters, 29(8), 1993, pp. 705-707
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
8
Year of publication
1993
Pages
705 - 707
Database
ISI
SICI code
0013-5194(1993)29:8<705:DCOIIA>2.0.ZU;2-B
Abstract
Using picosecond pump-probe measurements, InGaAs/InGaAlAs and InGaAs/I nGaAsP quantum well modulator structures am compared directly. It is f ound that the short-pulse exciton saturation intensity for the Al-base d structure is at least 10 times that for the P-based system. The more efficient carrier sweep-out observed in the Al-based modulator is due to the lower valence-band discontinuity, making it by far the more at tractive structure for high-power application.