MICROWAVE-POWER INP INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
SONG JI HONG WP BHAT R CHOUGH KB HAYES JR SUGENG B WEI CJ HWANG JCM
Citation
Ji. Song et al., MICROWAVE-POWER INP INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(8), 1993, pp. 724-725
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
8
Year of publication
1993
Pages
724 - 725
Database
ISI
SICI code
0013-5194(1993)29:8<724:MIIDB>2.0.ZU;2-8
Abstract
The first demonstration of the microwave power performance of an InP/I nGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approxima tely 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs fo r microwave power applications.