DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION

Authors
ONEILL AG BARLOW RD BISWAS RG PHILLIPS PJ TAYLOR S GUNDLACH A
Citation
Ag. Oneill et al., DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION, Electronics Letters, 29(3), 1993, pp. 263-264
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
3
Year of publication
1993
Pages
263 - 264
Database
ISI
SICI code
0013-5194(1993)29:3<263:DODBIS>2.0.ZU;2-L
Abstract
Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhan ced diffusion resulting from oxidation by plasma anodisation, making i t well suited to complement low temperature processing.