HIGH-EFFICIENCY HIGH-SPEED PHOTODETECTION IN A MONOLITHICALLY INTEGRATABLE INGAAS INP MQW LASER STRUCTURE AT 1.5 MU-M/

Authors
MCGREER KA CHARBONNEAU S DAVIES M AERS G TAKASAKI B LANDHEER D MOSS D DION M DELAGE A
Citation
Ka. Mcgreer et al., HIGH-EFFICIENCY HIGH-SPEED PHOTODETECTION IN A MONOLITHICALLY INTEGRATABLE INGAAS INP MQW LASER STRUCTURE AT 1.5 MU-M/, Electronics Letters, 29(3), 1993, pp. 271-272
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
3
Year of publication
1993
Pages
271 - 272
Database
ISI
SICI code
0013-5194(1993)29:3<271:HHPIAM>2.0.ZU;2-U
Abstract
Time-resolved photocurrent measurements in a reverse biased InGaAs/InP ridge waveguide multiquantum well pin laser structure at 1.54 mum are reported. The pulse response of this monolithically integratable dete ctor is approximately 150 ps FWHM with an internal quantum efficiency of approximately 100% at reverse bias voltages of approximately 5 V.