FABRICATION AND CHARACTERISTICS OF IMPROVED STRAINED QUANTUM-WELL GAINALAS GAIN-COUPLED DFB LASERS

Authors
BORCHERT B STEGMULLER B GESSNER R
Citation
B. Borchert et al., FABRICATION AND CHARACTERISTICS OF IMPROVED STRAINED QUANTUM-WELL GAINALAS GAIN-COUPLED DFB LASERS, Electronics Letters, 29(2), 1993, pp. 210-211
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
2
Year of publication
1993
Pages
210 - 211
Database
ISI
SICI code
0013-5194(1993)29:2<210:FACOIS>2.0.ZU;2-5
Abstract
Results of improved 1.58 mum GaInAlAs strained quantum-well gain-coupl ed DFB lasers are presented. Besides the excellent spectral properties (singlemode yield of 75% and a sidemode suppression ratio of 45 dB), 20 mW output power and CW operation at 80-degrees-C have been obtained . A record 3 dB bandwidth of 11 GHz was measured. Spectral or dynamica l instabilities due to the loss grating have not been observed.