IMPROVED NEGATIVE DYNAMIC RESISTANCE MODEL FOR HIGH-VOLTAGE MOSFETS

Authors
DEBRUYCKER A ZHOU MJ VANCALSTER A WITTERS J
Citation
A. Debruycker et al., IMPROVED NEGATIVE DYNAMIC RESISTANCE MODEL FOR HIGH-VOLTAGE MOSFETS, Electronics Letters, 29(2), 1993, pp. 212-213
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
2
Year of publication
1993
Pages
212 - 213
Database
ISI
SICI code
0013-5194(1993)29:2<212:INDRMF>2.0.ZU;2-N
Abstract
For MOSFETs operating at moderate and higher power levels a negative d ynamic resistance is observed. An electrothermal model based on the te mperature dependence of the mobility and the velocity saturation is pr oposed.