IMPROVED SIGNAL-TO-NOISE RATIO IN GAIN-LEVERED INGAAS INP MQW LASERS

Authors
SELTZER CP WESTBROOK LD WICKES HJ
Citation
Cp. Seltzer et al., IMPROVED SIGNAL-TO-NOISE RATIO IN GAIN-LEVERED INGAAS INP MQW LASERS, Electronics Letters, 29(2), 1993, pp. 230-231
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
2
Year of publication
1993
Pages
230 - 231
Database
ISI
SICI code
0013-5194(1993)29:2<230:ISRIGI>2.0.ZU;2-E
Abstract
The gain-lever effect is demonstrated in long wavelength InGaAs/InP qu antum well lasers for the first time. Preliminary measurements show an improvement in amplitude modulation efficiency of 10 dB at 900 MHz. R elative intensity noise increases by just 2.5 dB yielding a signal-to- noise ratio improvement of 7.5 dB.