WAFER-SCALE UNIFORMITY OF VERTICAL-CAVITY LASERS GROWN BY MODIFIED PHASE-LOCKED EPITAXY TECHNIQUE

Authors
WALKER JD KUCHTA DM SMITH JS
Citation
Jd. Walker et al., WAFER-SCALE UNIFORMITY OF VERTICAL-CAVITY LASERS GROWN BY MODIFIED PHASE-LOCKED EPITAXY TECHNIQUE, Electronics Letters, 29(2), 1993, pp. 239-240
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
2
Year of publication
1993
Pages
239 - 240
Database
ISI
SICI code
0013-5194(1993)29:2<239:WUOVLG>2.0.ZU;2-O
Abstract
By using discrete 180-degrees substrate rotations during phase-locked growth of vertical-cavity laser diodes, 1.5% uniformity of lasing wave length has been achieved over a 50 mm wafer. For 30 x 30 mum2 devices, the threshold current distribution is 18 +/- 4 mA, and the peak CW po wer distribution is 5 +/- 3 mW.