A. Cacciato et al., STRUCTURAL AND ELECTRICAL STUDY OF EPITAXIALLY REALIGNED SB-DOPED POLYCRYSTALLINE SI FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 18(3), 1993, pp. 289-294
Epitaxial realignment of Sb-doped polycrystalline Si films deposited o
n Si substrates has been induced by rapid thermal annealing in the tem
perature range 1000-1 150-degrees-C. Structural and electrical charact
erization of the realigned layers has been carried out by means of Rut
herford backscattering and channelling analysis, transmission electron
microscopy and incremental sheet resistance in conjunction with Hall
effect measurements. The realignment mode of the Sb-doped poly-Si film
s occurs by planar movement of the poly-Si-C-Si interface towards the
film surface as in undoped samples. The realignment kinetics is enhanc
ed by a factor of no more than 3 at high Sb doses. The electrically ac
tive Sb concentration in the realigned layers is 30% higher than the s
olid solubility limit of Sb in Si, indicating that equilibrium conditi
ons are not reached during the rapid thermal processes.