GROWTH OF POLYCRYSTALLINE CUINSE2 THIN-FILMS BY EFFUSION EVAPORATION

Authors
MEDVEDKIN GA MAGOMEDOV MA
Citation
Ga. Medvedkin et Ma. Magomedov, GROWTH OF POLYCRYSTALLINE CUINSE2 THIN-FILMS BY EFFUSION EVAPORATION, Semiconductor science and technology, 8(5), 1993, pp. 652-656
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
5
Year of publication
1993
Pages
652 - 656
Database
ISI
SICI code
0268-1242(1993)8:5<652:GOPCTB>2.0.ZU;2-T
Abstract
The condensation process for thin polycrystalline CuInSe2 films has be en studied via effusion evaporation of the ternary substance in the Se -enriched and Se-free vapour phases. The film growth is shown to be in good agreement with a model of small nuclei. The temperature of the c ritical nucleus formation has been determined: p-type films generally grow at higher temperatures than n-type films. We discuss the influenc e of technological parameters on a point defect ensemble in the prepar ed films, resulting in a wide variation of their electrical and optica l properties.