BARRIER-DOPED ZNSETE-(CDSE)M(ZNSE)N SHORT-PERIOD SUPERLATTICE QUANTUM-WELLS - ATOMIC LAYER EPITAXIAL-GROWTH AND OPTICAL-PROPERTIES

Barrier-doped ZnSe:Te-(CdSe)m(ZnSe)n short-period superlattice quantum wells (BDSPSQW) With isoelectronic Te elements have been fabricated b y means of atomic layer epitaxy. Luminescence from BDSPSQW was strongl y modified by spatially selective introduction of Te isoelectronic cen tres in the barrier. Free-quantum-well and self-trapped excitons can c oexist over a wide range of temperatures because they are separated fr om each other spatially. Room-temperature luminescence was dominated b y narrow recombination of quantum-well excitons. This phenomenon is di scussed in terms of doping position and doping density, using the mode l of exciton extrinsic self-trapping.