PALLADIUM-RELATED DEEP LEVELS IN SILICON

The results of a study carried out on Pd-doped p+ n Si junctions using deep-level transient spectroscopy (DLTS) are reported. Four deep leve ls associated with Pd at energy positions E(c) - 0.18 eV, E(c) - 0.22 eV, E(c) - 0.37 eV and E(c) - 0.59 eV are observed. These deep levels have been observed simultaneously in the same as-diffused Si: Pd sampl es for the first time, to the best of our knowledge. Detailed data on the emission rates, capture cross sections and their temperature depen dence and deep-level distribution profiles of the palladium-related de fects are presented. Isochronal annealing characteristics of these def ects have also been studied up to 400-degrees-C yielding some interest ing new insights. Our results cast doubts on some of the currently hel d models for the structure of some of these defects.