LINE BROADENING DUE TO CARRIER CARRIER SCATTERING IN QUANTUM-WELL HETEROSTRUCTURES

Authors
HAMILTON RAH REES P
Citation
Rah. Hamilton et P. Rees, LINE BROADENING DUE TO CARRIER CARRIER SCATTERING IN QUANTUM-WELL HETEROSTRUCTURES, Semiconductor science and technology, 8(5), 1993, pp. 728-734
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
5
Year of publication
1993
Pages
728 - 734
Database
ISI
SICI code
0268-1242(1993)8:5<728:LBDTCC>2.0.ZU;2-3
Abstract
Uncertainty in electron energy levels due to carrier-carrier scatterin g is thought to cause line broadening in quantum well lasers. Calculat ions of this effect in the conduction and valence bands are presented. Approximate results applicable over a range of materials, temperature s and Fermi levels are given.