ALUMINUM-FREE GAAS GAINASP QUANTUM-WELL LASERS/

Al-free GaAs/GaInAsP separate-confinement-heterostructure single-quant um-well lasers are reported. The laser structure was grown by ps-sourc e molecular beam epitaxy. A low threshold current density of 207 A/cm2 and a high characteristic temperature of 167 K were achieved for the uncoated broad-area lasers. The transparency current density was 58 A/ cm2 and pin coefficient 0-039 cm mum A-1. The internal quantum efficie ncy and internal waveguide loss were 86% and 5.7 cm-1, respectively. T he results are comparable to those obtained for GaAs/AlGaAs quantum we ll lasers.