HIGH-QUALITY 0.98-MU-M GAINAS GAAS/GAINP LASERS GROWN BY CBE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE/

Authors
GARCIA JC MAUREL P HIRTZ JP
Citation
Jc. Garcia et al., HIGH-QUALITY 0.98-MU-M GAINAS GAAS/GAINP LASERS GROWN BY CBE USING TERTIARYBUTYLARSINE AND TERTIARYBUTYLPHOSPHINE/, Electronics Letters, 29(5), 1993, pp. 432-433
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
5
Year of publication
1993
Pages
432 - 433
Database
ISI
SICI code
0013-5194(1993)29:5<432:H0GGLG>2.0.ZU;2-#
Abstract
HIgh quality GaInAs/GaAs/GaInP laser structures were grown by chemical beam epitaxy using tertiarybutylarsine (TBAs) and tertiarybutylphosph ine (TBP) under pulsed conditions. For a 300 mum long cavity, a thresh old current density of 390 A/cm2 and external quantum efficiency of 0. 6 W/A (two facets) were obtained, which are typical for this kind of s tructure. This demonstrates the suitability of TBP and TBAs as substit utes of arsine and phosphine in chemical beam epitaxy for laser fabric ation.